Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

Gated Silicon Drift Detector Fabricated from a Low-Cost Silicon Wafer

Inexpensive high-resolution silicon (Si) X-ray detectors are required for on-site surveys of traces of hazardous elements in food and soil by measuring the energies and counts of X-ray fluorescence photons radially emitted from these elements. Gated silicon drift detectors (GSDDs) are much cheaper to fabricate than commercial silicon drift detectors (SDDs). However, previous GSDDs were fabricat...

Perforated diode neutron detector modules fabricated from high-purity silicon

Compact neutron detectors are being designed and tested for use as low-power real-time personnel dosimeters. The neutron detectors are pin diodes that are mass produced from high-purity Si wafers. Each detector has thousands of circular perforations etched vertically into the device. The perforations are backfilled with LiF to make the pin diodes sensitive to thermal neutrons. The prototype dev...

Simulation and Fabrication of Gated Silicon Drift X-Ray Detector Operated by Peltier Cooling

A proposed simply structured gated silicon (Si) drift X-ray detector operated using Peltier cooling and only a single high-voltage source is investigated. Because the device structure is much simpler than that of commercial Si drift detectors (SDDs), which require at least two high-voltage sources, the cost of the X-ray detection system can be reduced. The absorption of cadmium X-ray fluorescen...

Use of a silicon drift detector for cathodoluminescence detection

Hydrophobic silicon wafer bonding

Wafers prepared by an HF dip without a subsequent water rinse were bonded at room temperature and annealed at temperatures up to 1100 “C. Based on substantial differences between bonded hydrophilic and hydrophobic Si wafer pairs in the changes of the interface energy with respect to temperature, secondary ion mass spectrometry (SIMS) and transmission electron microscopy (TEM), we suggest that h...